Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
$108.11
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
Bostock Quality Assurance
JANTX2N6796U FEATURES
•Surface mount equivalent of JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 numberseries. •JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.*JANS qualification is available on 2N6798U only.(See part nomenclature for all available options.) •RoHS compliant by design.
JANTX2N6796U DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-reliability applications. The 2N6798U part number is also qualified to the JANS level. Thesedevices are also available in a TO-205AF (TO-39) package. Microsemi also offers numerousother transistor products to meet higher and lower power ratings with various switching speedrequirements in both through-hole and surface-mount packages.
JANTX2N6796U APPLICATIONS / BENEFITS
•Compact surface mount design enables mounting in crowded areas. •Military and other high-reliability applications.MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
Product Attributes
TYPE | DESCRIPTION | Select all |
---|---|---|
Maximum Gate Charge (Qg) @ Vgs | 28.51 nC @ 10 V | |
Maximum Gate Threshold Voltage at Drain Current | 4V @ 250µA | |
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 195mOhm @ 8A, 10V | |
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
Package / Case | 18-CLCC | |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
Supplier Device Package | 18-ULCC (9.14x7.49) | |
Drain to Source Voltage (Vdss) | 100 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Maximum Power Dissipation | 800mW (Ta), 25W (Tc) | |
Maximum Gate-Source Voltage | ±20V | |
Series | Military, MIL-PRF-19500/557 | |
Package | Bulk | |
Product Status | Obsolete |
$108.11
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.