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$0.35
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
Bostock Quality Assurance
UPA2825T1S-E2-AT Features
• VDSS = 30 V (TA = 25°C) • Low on-state resistance⎯ RDS(on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 24 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader (HWSON-8) • Pb-free, Halogen Free
UPA2825T1S-E2-AT Description
The μPA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of anotebook computer and Lithium-Ion battery protection circuit.
Product Attributes
TYPE | DESCRIPTION | Select all |
---|---|---|
Maximum Input Capacitance (Ciss) at Vds | 2600 pF @ 10 V | |
Maximum Gate Charge (Qg) @ Vgs | 57 nC @ 10 V | |
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 4.6mOhm @ 24A, 10V | |
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
Package / Case | 8-PowerWDFN | |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) | |
Supplier Device Package | 8-HWSON (3.3x3.3) | |
Drain to Source Voltage (Vdss) | 30 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | 150°C (TJ) | |
FET Type | N-Channel | |
Maximum Power Dissipation | 1.5W (Ta), 16.5W (Tc) | |
Maximum Gate-Source Voltage | ±20V | |
Package | Tape & Reel (TR) | |
Product Status | Obsolete |
$0.35
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.