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Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
Bostock Quality Assurance
UPA2631T1R-E2-AX Features
• –1.8V drive available • Low on-state resistance⎯ RDS (on)1 = 32 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A)⎯ RDS (on)2 = 41 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)⎯ RDS (on)3 = 62 mΩ MAX. (VGS = –1.8 V, ID = –3.0 A) • Built-in gate protection diode • Lead-free and Halogen-free
UPA2631T1R-E2-AX Description
Product Attributes
TYPE | DESCRIPTION | Select all |
---|---|---|
Maximum Input Capacitance (Ciss) at Vds | 1240 pF @ 10 V | |
Maximum Gate Charge (Qg) @ Vgs | 12.5 nC @ 4.5 V | |
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 62mOhm @ 3A, 1.8V | |
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 1.8V, 4.5V | |
Package / Case | 6-WFDFN Exposed Pad | |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
Supplier Device Package | 6-HUSON (2x2) | |
Drain to Source Voltage (Vdss) | 20 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | 150°C (TJ) | |
FET Type | P-Channel | |
Maximum Power Dissipation | 2.5W (Ta) | |
Maximum Gate-Source Voltage | ±8V | |
Package | Tape & Reel (TR) | |
Product Status | Active |
Active
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.