F6101NTGK8

F6101NTGK8 Features

 10GHz to 14GHz operation 8 radiation channels 6-bit phase control 20ns typical gain settling time 20ns typical phase settling time 2.5° typical RMS phase error 0.25dB typical RMS gain error 30dB gain attenuation range 5-bit IC address Integrated proportional-to-absolute temperature (PTAT)sensor with external biasing -40°C to +95°C internal temperature sensor Programmable 4-state on-chip memory Supply voltage: +2.1V to +2.5V -40°C to +95°C ambient operating temperature range 27°C typical ambient operating temperature 5mm x 5mm, 40-QFN package

F6101NTGK8 Description

The F6101 is an 8-channel receiver silicon IC designed using aSiGe BiCMOS process for Ku-Band SATCOM phased arrayapplications. The core IC has 6-bit phase control coupled with morethan 30dB gain control on each channel to achieve fine beamsteering and gain compensation between channels. The devicehas 15.5dB nominal electric gain and -23dBm IP1dB. The core chipachieves an RMS phase error of 2.5° and RMS gain error of 0.25dBover the frequency of operation. The typical total power con-sumption is 0.34W (43mW per channel).

F6101NTGK8 Typical Applications

 Ku-Band SATCOM Aerospace and Maritime Weather Radar Beam Steering Test and Measurement